Fuji

2SK2645-01MR Datasheet – 600V, N-Ch, MOSFET ( PDF )

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: 2SK2645-01MR

Function: 600V, 9A, N-Channel MOSFET ( Transistor )

Package: TO-220F-15 Type

Manufacturer: Fuji Electric

Pinouts:

2SK2645-01MR datasheet

Description

This is N-Channel MOSFET.

Features

1. High speed switching
2. Low on-resistance
3. No secondary breadown
4. Low driving power
5. Avalache-proof

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 9 A
4. Max. Power Dissipation: Pd = 50 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C

Applications

1. Switching Regulators
2. UPS
3. DC-DC converters
4. General Purpose Power Amplifier

Other data sheets are available within the file: 2SK2645, K2645, K2645-01MR

2SK2645-01MR Datasheet PDF Download

2SK2645-01MR pdf


 

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CS150N03 Datasheet – 30V, 150A, N-Ch, MOSFET (Transistor)

Posted on by pinout

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: CS150N03

Function: Silicon N-Channel Power MOSFET ( 30V, 150A )

Package: TO-220AB Type

Manufacturer: WUXI CHINA RESOURCES HUAJING MICROELECTRONICS

( http://www.crhj.com.cn )

Image

CS150N03 transistor mosfet

Description

CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard

Features

1. Fast Switching
2. LowON Resistance(Rdson≤3.5mΩ)
3. Low Gate Charge (Typical Data:75nC)
4. Low Reverse transfer capacitances(Typical:800pF)
5. 100%Single Pulse avalanche energy Test

Applications： UPS, Inverter, Lighting

Pinouts:

CS150N03 pinout datasheet

Absolute Maximum Ratings (Tc = 25°C)

1. Drain to source voltage: VDSS = 30 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 150 A
4. Drain power dissipation : PD = 100 W
5. Single pulse avalanche energy : Eas =1300 mJ
6. Channel temperature: Tch = -55 to +175 °C
7. Storage temperature: Tstg = -55 to +175 °C

Other data sheets are available within the file: CS150N03A8

CS150N03 Datasheet PDF Download

CS150N03 pinout


 

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