Part Number: K2529

Function: 50A, 60V, Silicon N-Channel MOSFET

Package: TO-220CFM type

Manufacturer: Hitachi ( Renesas Electronics )

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Features

1. Low on-resistance
2. RDS(on) = 7 mΩ typ.
3. High speed switching
4. 4 V gate drive device can be driven from 5 V source

Pinouts:

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 50 A
4. Drain peak current : ID(pulse) = 200 A
5. Body to drain diode reverse drain current : IDR = 50 A
6. Avalanche current : IAP = 45 A
7. Avalanche energy : EAR = 174 mJ
8. Channel dissipation: Pch = 35 W

Application

1. High speed power switching

Other data sheets are available within the file: 2SK2529

K2529 Datasheet PDF Download