Part Number: K2529
Function: 50A, 60V, Silicon N-Channel MOSFET
Package: TO-220CFM type
Manufacturer: Hitachi ( Renesas Electronics )
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Features
1. Low on-resistance
2. RDS(on) = 7 mΩ typ.
3. High speed switching
4. 4 V gate drive device can be driven from 5 V source
Pinouts:
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 60 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 50 A
4. Drain peak current : ID(pulse) = 200 A
5. Body to drain diode reverse drain current : IDR = 50 A
6. Avalanche current : IAP = 45 A
7. Avalanche energy : EAR = 174 mJ
8. Channel dissipation: Pch = 35 W
Application
1. High speed power switching
Other data sheets are available within the file: 2SK2529
K2529 Datasheet PDF Download
