International Rectifier Archives - Page 10 of 35

Description

The EMP25P12B is a Power Integrated Module for Motor Driver applications with embedded sensing resistors on all three-phase output currents. Each sensing resistor’s head is directly bonded to an external pin to reduce parasitic effects and achieve high accuracy on feedback voltages. Since their thermal coefficient is very low, no value compensation is required across the complete operating temperature range.

Power Module :

• NPT IGBTs 25A, 1200V

• 10us Short Circuit capability
(1) Square RBSOA
(2) Low Vce(on) (2.28Vtyp @ 25A, 25°C)
(3) Positive Vce(on) temperature coefficient

• Gen III HexFred Technology

Part Number: IRF840

Function: 500V, 8A, HEXFET Power MOSFET

Manufacturer: International Rectifier, ( https://www.infineon.com/ )

Package: TO-220 Type

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Description

The IRF840 is 500V, 8A, N-CHANNEL POWER MOSFET.

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Package is universally preferred for all commerial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughtout the industry.

Pinouts:

IRF840 pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 8 A (Tc = 25°C)

4. Drain Power Dissipation: Pd = 125 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Electrical Characteristics

IRF840 Datasheet PDF

Other data sheets are available within the file: IRF840AL, IRF840AS, IRF840LCL, IRF840LCS