International Rectifier

G7S313U Datasheet PDF – 330V, PDP Trench IGBT – IR

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: G7S313U, IRG7S313UPbF

Function  : 330V, PDP Trench IGBT

Package: TO-263AB Type

Manufacturer: International Rectifier ( http://www.irf.com/ )

Image

G7S313U pdp trench igbt

Description

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on)and low EPULSE rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.

Pinout

G7S313U datasheet pinout

Features

1. Advanced Trench IGBT Technology

2. Optimized for Sustain and Energy Recovery circuits in PDP applications

3. Low VCE(on)and Energy per Pulse (EPULSE TM) for improved panel efficiency

4. High repetitive peak current capability

5. Lead Free package

 

G7S313U Datasheet


 

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G4PC50W Datasheet PDF – 600V, 27A, IGBT, IRG4PC50W – IR

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Part Number: IRG4PC50W, Marking : G4PC50W

Function: 600V, 27A, IGBT

Package: TO-247AC Type

Manufacturer: International Rectifier

Image

G4PC50W igbt

Description

The G4PC50W is 600V, 27A, Insulated Gate Bipolar Transistor.

Features

1. Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications

2. Industry-benchmark switching losses improve efficiency of all power supply topologies

3. 50% reduction of Eoff parameter

4. Low IGBT conduction losses

5. Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability

Pinout

G4PC50W datasheet pinout
Benefits

1. Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz (“hard switched” mode)

2. Of particular benefit to single-ended converters and boost PFC topologies 150W and higher

3. Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300 kHz)

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 27 A (Tc = 100°C)

4. Maximum Power  Dissipation: Pd = 78 W (Tc = 100°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

G4PC50W Datasheet PDF


 

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