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Description

This is 2 channels AF power amplifier. The STK403-130 is an integrated circuit (IC) module manufactured by SANYO (now part of ON Semiconductor) that is designed for use in audio amplification applications. Specifically, it is a hybrid power amplifier module that combines multiple components into a single package to provide high-quality audio amplification.

1. Amplification Type: Sereo power amplifier module, which means it is capable of amplifying two audio channels (left and right) simultaneously.

2. Power Output: This module is known for its high power output capability. It can deliver a substantial amount of power to drive speakers, making it suitable for use in audio systems with demanding power requirements.

Applications:

1. 100 W audio use

2. Home stereo systems, A/V receivers, amplifiers for musical instruments

Other data sheets are available within the file:

STK-403130, STK-403-130, STK403130

NAND flash memory is a type of non-volatile memory technology that is widely used for data storage in a variety of electronic devices, ranging from USB drives and memory cards to solid-state drives (SSDs) and embedded systems. It’s called “NAND” because it uses a NAND gate structure in its memory cell design. NAND flash offers high storage density, fast read and write speeds, and relatively low cost compared to other types of non-volatile memory.

Part Number: H27U2G8F2C

Function: 2 Gbit (256M x 8 bit) NAND Flash

Package: TSSOP 48, FBGA63 Pin Type

Manufacturer: Hynix

Images: H27U2G8F2C pdf memory

Description

H27U2G8F2C series is a 256Mx8bit with spare 8Mx8 bit capacity. The device is offered in 3.0/1.8 Vcc Power Supply, and with x8 and x16 I/O interface Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased

The device contains 2048 blocks, composed by 64 pages. Memory array is split into 2 planes, each of them consisting of 1024 blocks. Like all other 2KB – page NAND Flash devices, a program operation allows to write the 2112-byte page in typical 200us(3.3V) and an erase operation can be performed in typical 3.5ms on a 128K-byte block.

Block Diagram:
H27U2G8F2C datasheet pinout

Features:

1. DENSITY
– 2Gbit: 2048blocks

2. Nand FLASH INTERFACE

– NAND Interface

– ADDRESS / DATA Multiplexing

3. PAGE READ / PROGRAM

– Random access: 25us (Max)

– Sequential access: 25ns / 45ns (3.0V/1.8V, min.)

– Program time(3.0V/1.8V): 200us / 250us (Typ)

– Multi-page program time (2 pages): 200us / 250us (3.0V/1.8V, Typ.)

Pinout

STK403-130 PDF Datasheet – 2-Channel, AF Power Amplifier

Description

STK403-130 PDF Datasheet

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H27U2G8F2C PDF Datasheet – 2 Gbit NAND Flash Memory

Description

H27U2G8F2C PDF Datasheet