S24CS08 PDF Datasheet – 8k bit, CMOS Serial EPROM

Part Number: S24CS08

Function: 8k bit, 2-Wire CMOS Serial EPROM

Package: DIP, SOP 8 Pin Type

Manufacturer: Seiko Instruments

Images:S24CS08 pdf eprom

Description

The S-24CS01A, S-24CS02A, S-24CS04A, S-24CS08A ( S24CS08 ) is a 2-wired, low power and wide range operation 1k bit, 2k bit, 4k bit and 8k bit E2PROM organized as 128 words × 8 bits, 256 words × 8 bits, 512 words × 8 bits and 1024 words × 8 bits in each.

An 8K-bit CMOS Serial EPROM is a type of non-volatile memory device that stores digital information and can be electronically erased and reprogrammed. “8K-bit” indicates the memory capacity, which means this EPROM can store 8,192 individual bits of data. “CMOS” stands for Complementary Metal-Oxide-Semiconductor, which is a technology used in the design of the integrated circuit.

S24CS08 pinout datasheet

Features

• Low power consumption Standby : 2.0 µA Max. (VCC=5.5 V)
Read : 0.8 mA Max. (VCC=5.5 V)

• Operating voltage range Read : 1.8 to 5.5 V (at −40 to +85°C)
Write : 2.7 to 5.5 V (at −40 to +85°C)

• Page write : 8 bytes / page (S-24CS01A/02A) 16 bytes / page (S-24CS04A/08A)

• Sequential read

• Operating Frequency : 400 kHz (VCC=5 V±10 %, at −40 to +85°C)

• Write disable function when power supply voltage is low

• Data retention: 10 years (after rewriting 106 cycles/word at +85°C)

• S-24CS01A : 1k bit
• S-24CS02A : 2k bit
• S-24CS04A : 4k bit
• S-24CS08A : 8k bit

S24CS08 PDF Datasheet

P10N60 PDF Datasheet – 600V, 10A, IGBT ( SGP10N60 )

Part Number: P10N60, SGP10N60

Function: 600V, 10A, IGBT in NPT-technology

Package: TO-220AB, TO-263AB, TO-247AC Type

Manufacturer: Infineon Technologies Corporation

Images:P10N60 pdf pinout

Description

The P10N60 is Fast S-IGBT in NPT-technology.

1. IGBT (Insulated Gate Bipolar Transistor): An IGBT is a semiconductor device that combines features of both the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and the bipolar transistor. It is commonly used in high-power switching applications, such as motor drives, power inverters, and voltage regulation circuits. IGBTs are known for their ability to handle high voltage and current levels.

2. Fast S-IGBT: This suggests that the IGBT is designed for applications where high-speed switching is required. Fast IGBTs are optimized for reducing switching times, which can help improve the efficiency and performance of high-frequency applications.

3. NPT-Technology: NPT (Non-Punch Through) is a technology used in some IGBT designs. NPT-IGBTs have a particular structure that prevents punch-through, which is a phenomenon where the electric field in the device penetrates through the entire thickness of the semiconductor, reducing its blocking capability. NPT-IGBTs offer improved voltage blocking characteristics and reduced switching losses compared to some other IGBT types.

P10N60 datasheet igbt

 

Features

• 75% lower Eoff compared to previous generation combined with low conduction losses

• Short circuit withstand time – 10 µs

• Designed for: – Motor controls – Inverter

• NPT-Technology for 600V applications offers:

– very tight parameter distribution

– high ruggedness, temperature stable behaviour

– parallel switching capability

Other data sheets are available within the file: SGP10N60 SGB10N60, SGW10N60

P10N60 PDF Datasheet

Related articles across the web