Part Number: P10N60, SGP10N60
Function: 600V, 10A, IGBT in NPT-technology
Package: TO-220AB, TO-263AB, TO-247AC Type
Manufacturer: Infineon Technologies Corporation
Images:
Description
The P10N60 is Fast S-IGBT in NPT-technology.
1. IGBT (Insulated Gate Bipolar Transistor): An IGBT is a semiconductor device that combines features of both the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and the bipolar transistor. It is commonly used in high-power switching applications, such as motor drives, power inverters, and voltage regulation circuits. IGBTs are known for their ability to handle high voltage and current levels.
2. Fast S-IGBT: This suggests that the IGBT is designed for applications where high-speed switching is required. Fast IGBTs are optimized for reducing switching times, which can help improve the efficiency and performance of high-frequency applications.
3. NPT-Technology: NPT (Non-Punch Through) is a technology used in some IGBT designs. NPT-IGBTs have a particular structure that prevents punch-through, which is a phenomenon where the electric field in the device penetrates through the entire thickness of the semiconductor, reducing its blocking capability. NPT-IGBTs offer improved voltage blocking characteristics and reduced switching losses compared to some other IGBT types.
Features
• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for: – Motor controls – Inverter
• NPT-Technology for 600V applications offers:
– very tight parameter distribution
– high ruggedness, temperature stable behaviour
– parallel switching capability
Other data sheets are available within the file: SGP10N60 SGB10N60, SGW10N60
