C1162 Transistor – 35V, 2.5A, NPN, Equivalent, 2SC1162

Part Number: C1162, 2SC1162

Function: 35V, 2.5A, NPN Transistor

Package: TO-126 MOD Type

Manufacturer: Renesas

Images:C1162 pinout transistor

Description

C1162 is Silicon NPN Epitaxial Transistor.

Characteristics:

C1162 datasheet

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 35 V

2. Collector to Emitter Voltage: Vceo = 35 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 2.5 A

5. Collector Dissipation : Pc = 0.75 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. Low frequency power amplifier complementary pair with 2SA715

C1162 PDF Download

Related articles across the web

K117 MOSFET, Transistor, N-Ch, PDF Datasheet (2SK117)

Part Number: K117, 2SK117

Function: 50V, 10mA, N-Channel FET

Package: TO-92 Type

Manufacturer: Toshiba Semiconductor

Images:K117 pdf pinout

Description

K117 is 50V, 10mA, Silicon N Channel JFET. A Silicon N-Channel Junction-Type Field Effect Transistor (N-channel JFET) is a type of field-effect transistor (FET) made from silicon semiconductor material. It is characterized by its N-channel, which means that it operates with electron flow as the charge carriers in the channel region.

N-channel JFETs are commonly used in electronic circuits for various purposes, such as signal amplification, impedance matching, and voltage-controlled resistors. They are known for their high input impedance, which makes them suitable for applications where signal integrity and minimal loading of the source signal are important.

Applications:

Low Noise Audio Amplifier

 

Features

• High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0)

• High breakdown voltage: VGDS = −50 V

• Low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ)

• High input impedance: IGSS = −1 nA (max) (VGS = −30 V)

K117 datasheet

Absolute Maximum Ratings (Ta = 25°C) :

1. Gate-drain voltage : VGDS = – 50 V

2. Gate current : IG = 10 mA

3. Drain power dissipation : PD = 300 mW

4. Junction temperature : Tj = 125 °C

5. Storage temperature range : Tstg = -55 ~ 125 °C

 

K117 PDF Datasheet