Pinout

W20NM50 PDF – 550V, 20A, MOSFET- STW20NM50

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Part Number: W20NM50, STW20NM50

Function: N-Channel, 550V, 20A, MOSFET

Package: TO-247 Type

Manufacturer: STMicroelectronics

Images:STW20NM50 pdf pinout

Description

W20NM50 is N-CHANNEL, 500V – 0.20Ω – 20A, MDmesh Power MOSFET.

The MDmesh is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. Applications The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

Features

1. TYPICAL RDS(on) = 0.20Ω

2. HIGH dv/dt AND AVALANCHE CAPABILITIES

3. 100% AVALANCHE TESTED

4. LOW INPUT CAPACITANCE AND GATE CHARGE

5. LOW GATE INPUT RESISTANCE

6. TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS […]

STW20NM50 datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 A

3. Drain current: ID = 20 A

4. Total Power Dissipation: Ptot = 214 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -65 to +150 °C

Applications:

The MDmesh family is very suitable for increasing power density of high voltage converters allowing
system miniaturization and higher efficiencies.

W20NM50 PDF Datasheet

H20R1202 IGBT – 1200V, 20A, IHW20N120R2 ( TO-247 )

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Part Number: IHW20N120R2, H20R1202

Function: 1200V, 20A, Reverse Conducting IGBT

Package: TO-247 type

Manufacturer: Infineon Technologies

Image and Pinouts:
H20R1202 pdf igbt

Description

H20R1202 is 1200V, 20A. Reverse Conducting IGBT with monolithic body diode.

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.

These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.

 

Features

1. Powerful monolithic Body Diode with very low forward voltage

2. Body diode clamps negative voltages

3. Trench and Fieldstop technology for 1200 V applications offers :

(1) Very tight parameter distribution

(2) High ruggedness, temperature stable behavior

4. NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)

5. Low EMI

6. Qualified according to JEDEC for target applications

7. Pb-free lead plating; RoHS compliant

H20R1202 datasheet

Applications:

1. Inductive Cooking

2. Soft Switching Applications

H20R1202 PDF Datasheet