LP156WH4-TLA1 Datasheet – 15.6 inch, HD TFT LCD Module

Part Number: LP156WH4-TLA1

Function: 15.6 inch, HD TFT LCD Module

Manufacturer: LG

Images:

LP156WH4-TLA1 datasheet

Description

The LP156WH4-TLA1 is a Color Active Matrix Liquid Crystal Display with an integral LED backlight system. The matrix employs a-Si Thin Film Transistor as the active element. It is a transmissive type display operating in the normally white mode. This TFT-LCD has 15.6 inches diagonally measured active display area with HD resolution (1366 horizontal by 768 vertical pixel array). Each pixel is divided into Red, Green and Blue sub-pixels or dots which are arranged in vertical stripes. Gray scale or the brightness of the sub-pixel color is determined with a 6-bit gray scale signal for each dot, thus, presenting a palette of more than 262,144 colors. The LP156WH4 has been designed to apply the interface method that enables low power, high speed, low EMI.

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LP156WH4-TLA1 lcd module

Specifications:

1. Active Screen Size : 15.6 inches diagonal

2. Outline Dimension : 359.3(H, typ) × 209.5(V, typ) × 5.5(D,max) [mm]

3. Pixel Pitch : 0.252mm × 0.252 mm

4. Pixel Format : 1366 horiz. By 768 vert. Pixels RGB strip arrangement

5. Color Depth : 6-bit, 262,144 colors

6. Luminance, White : 220 cd/m2(Typ.5 point @ PWM Duty = 100%)

7. Power Consumption : Total 4.2 W(Typ.) Logic : 0.9W (Typ.@ Mosaic), B/L : 3.3W (Typ.@ VLED 12V )

8. Weight : 450g (Max.)

9. Display Operating Mode : Transmissive mode, normally white

10. Surface Treatment : Glare treatment (3H) of the front Polarizer

 

LP156WH4-TLA1 Datasheet

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TSF8N60M PDF Datasheet – 600V, 7.5A, N-Ch, MOSFET

TSF8N60M is one of the MOSFET types.

This product has 600V, N-Channel MOSFET functions.

The package is TO-220, TO-220F Type.

The manufacturers of this product is Truesemi.

See the preview image and the PDF file for more information.

Images:

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TSF8N60M pdf datasheet

Description

This is 600V, 7.5A, N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

TSF8N60M transistor pinout

Features

1. 7.5A,600v,RDS(on)=1.2Ω@VGS=10V

2. Gate charge (Typical 30nC)

3. High ruggedness

4. Fast switching

5. 100% AvalancheTested

6. Improved dv/dt capability

TSF8N60M PDF Datasheet


 

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