Pinout

H6NA80FI Transistor – 800V, 3.4A, MOSFET, STH6NA80FI

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: H6NA80FI

Function: N-Channel MOSFET ( 800V, 3.4A )

Pakcage : TO-247, ISOWATT218 Type

Manufacturer: ST Microelectronics

Images

H6NA80FI pdf pinout

Description

This is N-Channel 800V, 3.4A, Fast Power MOS Transistor.

H6NA80FI Features

1. TYPICAL RDS(on) = 1.8 Ω

2. AVALANCE RUGGED TECHNOLOGY

3. 100% AVALANCHE TESTED

4. REPETITIVE AVALANCHE DATA AT 100 °C

5. LOW GATE CHARGE

6. VERY HIGH CURRENT CAPABILITY

7. APPLICATION ORIENTED CHARACTERIZATION

H6NA80FI datasheet mosfet

Applications

1. HIGH CURRENT, HIGH SPEED SWITCHING

2. SOLENOID AND RELAY DRIVERS

3. REGULATORS

4. DC-DC & DC-AC CONVERTERS

5. MOTOR CONTROL, AUDIO AMPLIFIERS

6. AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 800 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 3.4 A

4. Power Dissipation : Ptot = 60 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -65 to +150 °C

 

H6NA80FI PDF Datasheet

D600 Transistor – NPN, 100V, 1A, 2SD600 ( PDF )

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Part Number: D600, 2SD600

Function: 100V, 1A, NPN transistor

Package: TO-126 Type

Manufacturer: Sanyo Semicon Device

Images:D600 pdf transistor

Description

D600 is 100V, 1A, NPN Epitaxial Planar Silicon Transistor. 

Characteristics:

Features

· High breakdown voltage VCEO 100V, High current 1A.

· Low saturation voltage, excellent hFE linearity

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 100 V

2. Collector to Emitter Voltage: Vceo = 200 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 1 A

5. Collector Dissipation : Pc = 1 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

D600 datasheet

D600 PDF Datasheet

D600 pdf