SFC2741C PDF Datasheet – Operational Amplifier

Part Number: SFC2741C

Function: Operational Amplifier ( Precision Voltage Regulator )

Package: TO-99 Type

Manufacturer: STMicroelectronics, ETC

Images:

SFC2741C datasheet pdf

 

Description

SFC2741C is Operational Amplifier. An operational amplifier, often abbreviated as “op-amp,” is a versatile and widely used electronic component that is designed to amplify and manipulate electrical signals, particularly analog signals. Op-amps are fundamental building blocks in electronic circuits and are utilized in a vast range of applications, from signal amplification and filtering to mathematical operations and voltage level shifting.

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SFC2741C amplifier

Ideal vs. Real Op-Amps:

In ideal op-amp models, properties like infinite gain, infinite input impedance, zero output impedance, and zero offset voltage are assumed. Real-world op-amps have limitations and imperfections, but they are designed to approximate ideal behavior as closely as possible.

Op-amps find applications in a wide range of electronic systems, including audio amplifiers, instrumentation amplifiers, filters, voltage followers, voltage comparators, oscillators, voltage regulators, and many more. Their versatility and ease of use have made them a foundational component in electronics, and there are numerous types and models of op-amps available to suit specific applications and requirements.

Other data sheets are available within the file: SFC2741DC, SFC2741EC, SFC2741KM

SFC2741C PDF Datasheet

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D2144 PDF Datasheet – 20V, 0.5A, NPN Transistor – Rohm

This post explains for the transistor.

The Part Number is 2SD2144, 2SD2144K.

The function of this semiconductor is 20V, 0.5A, NPN Transistor.

Manufacturer: Rohm

Preview images:

D2144 pdf datasheet

Description

This is High-current Gain Medium Power Transistor (20V, 0.5A). D2144 is a type of bipolar junction transistor (BJT) that consists of two n-type semiconductor materials separated by a single p-type material.

Features

1. High DC current gain. hFE = 1200 (Typ.)

2. High emitter-base voltage. VEBO = 12V (Min.)

3. Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 25 V

2. Collector to Emitter Voltage: Vceo = 20 V

3. Emitter to Base Voltage: Vebo = 12 V

4. Collector Current: Ic = 0.5 A

5. Collector Dissipation : Pc = 0.2 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Structure:

1. Epitaxial planar type NPN silicon transistor

D2144 PDF Datasheet