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TB2929HQ PDF Datasheet – 45W X 4-ch BTL Audio Power IC

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This post explains for the Audio Power IC.

The Part Number is TB2929HQ.

The function of this semiconductor is 45W X 4-ch BTL Audio Power IC.

The package is HZIP 25 Pin type

Manufacturer: Toshiba

Preview images :

1 page
TB2929HQ pdf datasheet

Description

The TB2929HQ is a four-channel BTL power amplifier for car audio applications.

BTL, which stands for “Bridge-Tied Load,” is a configuration commonly used in power amplifiers. A BTL power amplifier is designed to deliver a higher power output to a load (typically a speaker) by utilizing a bridge-tied load arrangement. This configuration allows for increased power without the need for a higher supply voltage.

This IC has a pure complementary P-ch and N-ch DMOS output stage, offering maximum output power (POUT MAX) of 45 W. It includes a standby switch, mute function and various
protection features.

 

Features

0. High output power

1. Standby switch (pin 4)

2. Mute function (pin 22)

3. Built-in AUX amplifier from single input to 2 channels output (pin 25)

4. Various protection features

 

2 page
TB2929HQ equivalent amplifier

Standby Switch (pin 4) :

The power supply can be turned on or off via pin 4 (Stby). The threshold voltage of pin 4 is
set at about 3 VBE (typ.). The power supply current is about 0.01 μA (typ.) in the standby state.

 

TB2929HQ PDF Datasheet

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ICE20N170B PDF – 600V, 20A, N-Ch, MOSFET, Transistor

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Part Number: ICE20N170B

Function: N-Channel Enhancement Mode MOSFET

Package: TO-263 Type

Manufacturer: Micross Components

Images:

1 page
ICE20N170B pdf pinout

Description

ICE20N170B is 600V, 20A, N-Channel Enhancement Mode MOSFET(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

• Low rDS(on)

• Ultra Low Gate Charge

• High dv/dt capability

• High Unclamped Inductive Switching (UIS) capability

• High peak current capability

• Increased transconductance performance

• Optimized design for high performance power systems

[…]

3 page
ICE20N170B mosfet datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 20 A

4. Power Dissipation : Ptot = 208 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

ICE20N170B PDF Datasheet

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