Part Number: S2N7002DW
Device Marking: 702
Function: 115mA, 60V, Dual N-Channel MOSFET
Package: SOT-363 Type
Manufacturer: SeCoS Corporation
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Description
The S2N7002DW is a dual N-channel MOSFET designed for low-power switching applications.
1. Drain-Source Voltage (VDS): Typically 60V (Volts). This is the maximum voltage that can be applied between the drain and source terminals.
2. Gate-Source Voltage (VGS): Typically ±20V (Volts). This is the maximum voltage that can be applied between the gate and source terminals.
3. Continuous Drain Current (ID): Typically 115mA (Milliamperes) per channel. This is the maximum continuous current that each MOSFET channel can handle flowing from the drain to the source.
Power Dissipation (PD): The power dissipation is not explicitly provided in your description. It typically depends on the package and thermal characteristics of the MOSFET.
Features
1. Molded Plastic.
2. Case Material-UL Flammability Rating 94V-0
3. Terminals: Solderable per MIL-STD-202, Method 208
4. Weight: 0.006 grams(approx.)
Pinouts
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 60 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 115 mA
4. Drain power dissipation : PD = 380 mW
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Applications
1. Level shifting, small signal amplification, LED driving
2. Load switching in battery-powered devices and low-voltage circuits.
S2N7002DW Datasheet PDF
