S2N7002DW Datasheet – 115mA, 60V, Dual N-Ch MOSFET

Part Number: S2N7002DW

Device Marking: 702

Function: 115mA, 60V, Dual N-Channel MOSFET

Package: SOT-363 Type

Manufacturer:  SeCoS Corporation


S2N7002DW datasheet pdf


The S2N7002DW is a dual N-channel MOSFET designed for low-power switching applications.

1. Drain-Source Voltage (VDS): Typically 60V (Volts). This is the maximum voltage that can be applied between the drain and source terminals.

2. Gate-Source Voltage (VGS): Typically ±20V (Volts). This is the maximum voltage that can be applied between the gate and source terminals.

3. Continuous Drain Current (ID): Typically 115mA (Milliamperes) per channel. This is the maximum continuous current that each MOSFET channel can handle flowing from the drain to the source.

Power Dissipation (PD): The power dissipation is not explicitly provided in your description. It typically depends on the package and thermal characteristics of the MOSFET.


1. Molded Plastic.

2. Case Material-UL Flammability Rating 94V-0

3. Terminals: Solderable per MIL-STD-202, Method 208

4. Weight: 0.006 grams(approx.)


S2N7002DW pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 60 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 115 mA

4. Drain power dissipation : PD = 380 mW

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C


1. Level shifting, small signal amplification, LED driving

2. Load switching in battery-powered devices and low-voltage circuits.

S2N7002DW Datasheet PDF