This is one of the types of MOSFETs and is a kind of transistor.
The IRF630 is an N-channel MOSFET with a voltage rating of 200V and a current rating of 9A.
It has a low on-resistance of 0.4 Ohm, which allows it to handle high power and reduce power loss.
The MOSFET is housed in a TO-220 package, which provides good thermal dissipation and makes it easy to mount on a heatsink.
Part Number: IRF630, IRF630FP
Function: N-CHANNEL, 200V, 0.35Ohm, 9A, MESH OVERLAY MOSFET
Package: TO-220, TO-220FP Type
Manufacturer: STMicroelectronics
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Description
This is N-channel 200V, 0.35Ω, 9A, Mesh Overlay II Power MOSFET.
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.
The IRF630 has a low on-resistance, which means it can handle high power and reduce power loss.
Its TO-220 package provides good thermal dissipation and makes it easy to mount on a heatsink.
Pinout
Features
1. Extremely high dv/dt capability
2. Very low intrinsic capacitances
3. Gate charge minimized
Applications:
1. Switching application
Maximum Ratings
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 200 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 9 A
4. Channel temperature: Tch = 150 °C
5. Storage temperature: Tstg = -65 to +150 °C
IRF630 Datasheet
