TC58TEG6DCJTA00 Datasheet – NAND Memory – Toshiba

Part Number: TC58TEG6DCJTA00

Function: NAND memory, Toggle DDR1.0

Package: 48 Pin Type

Manufacturer: Toshiba

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TC58TEG6DCJTA00

General Description

Toggle DDR is a NAND interface for high performance applications which support data read and write operations using bidirectional DQS. Toggle DDR NAND has implemented ’Double Data Rate’ without a clock. It is compatible with functions and command which have been supported in conventional type NAND(i.e. SDR NAND) while providing high data transfer rate based on the high-speed Toggle DDR Interface and saving power with separated DQ voltage. For applications that require high capacity and high performance NAND, Toggle DDR NAND is the most appropriate.

Product Organization :

TC58TEG6DCJTA00 datasheet

 

Toggle DDR1.0 NAND supports the interface speed of up to 100 MHz, which is faster than the data transfer rate offered by SDR NAND. Toggle DDR NAND transfers data at high speed using DQS signal that behaves as a clock, and DQS shall be used only when data is transferred for optimal power consumption.

This device supports both SDR interface and Toggle DDR interface. When starting, the device is activated in SDR mode. The interface mode can be changed into Toggle DDR interface utilizing specific command issued by the Host.

Pinout

TC58TEG6DCJTA00 pinout

 

 

TC58TEG6DCJTA00 Datasheet


 

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K3911 Datasheet PDF – N-Ch, 600V, 20A, MOSFET – Toshiba

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K3911, 2SK3911

Function: 600V, 20A, N-Channel MOSFET

Package: TO-3P, SC-65 Type

Manufacturer: Toshiba

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k3911-mosfet-toshiba

 

Description

This is Silicon N Channel MOS Type Field Effect Transistor.

Features

1. Small gate charge: Qg = 60 nC (typ.)

2. Low drain-source ON resistance: RDS (ON) = 0.22Ω (typ.)

3. High forward transfer admittance: |Yfs| = 11 S (typ.)

4. Low leakage current: IDSS = 500 μA (VDS = 600 V)

5. Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

 

Pinout

k3911-datasheet-pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS=600 V

2. Drain-gate voltage (RGS = 20 kΩ) : VDGR=600 V

3. Gate-source voltage: VGSS=±30 V

4. Drain power dissipation (Tc = 25°C) : PD=150 W

5. Single pulse avalanche energy : EAS=792 mJ

6. Avalanche current : IAR=20 A

7. Repetitive avalanche energy : EAR=15 mJ

Applications:

1. Switching Regulator

K3911 Datasheet


 

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