Part Number: TK14A55D, Marking : K14A55D
Function: Silicon N Channel MOS FET
Manufacturer: Toshiba
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Description
Switching Regulator Applications
1. Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.)
2. High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 550 V)
4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain-source voltage: VDSS = 550 V
2. Gate-source voltage: VGSS = ±30 V
3. Drain power dissipation (Tc = 25°C): PD = 50 W
4. Single pulse avalanche energy : EAS = 521 mJ
5. Avalanche current : IAR = 14 A
K14A55D Datasheet
