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Features

1. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

2. Low drain-source ON-resistance: RDS (ON)= 0.24 Ω(typ.)

3. High forward transfer admittance: |Yfs| = 7.0 S (typ.)

4. Low leakage current: IDSS= 10 μA (max) (VDS= 500 V)

Pinout

Maxmimum Ratings ( Ta = 25°C )

1. Drain-source voltage : VDSS = 500 V

2. Drain power dissipation (Tc =25°C) : PD = 50 W

3. Single pulse avalanche energy : EAS = 542 mJ

4. Avalanche current : IAR = 15 A

5. Repetitive avalanche energy : EAR = 5.0 mJ

Applications:

1. Switching Regulator

Part Number: K4107, 2SK4107

Function : Vdss=500V, 15A, N-Channel MOSFET , Transistor

Manufacturer: Toshiba

Image

Description

This is 500V, 15A, Silicon N-Channel MOS Field Effect Transistor.

1. Low drain−source ON resistance : RDS (ON)= 0. 33 Ω(typ.)

2. High forward transfer admittance : |Yfs| = 8.5 S (typ.)

3. Low leakage current : IDSS= 100 μA (max) (VDS= 500 V)

4. Enhancement mode : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

Pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain−source voltage: VDSS = 500 V

2. Drain−gate voltage (RGS= 20 kΩ): VDGR = 500 V

3. Gate−source voltage: VGSS = ±30 V

4. Drain power dissipation (Tc = 25°C): PD = 150 W

5. Single-pulse avalanche energy : EAS = 765 mJ

6. Avalanche current : IAR = 15 A

7. Repetitive avalanche energy : EAR = 15 mJ

Applications:

1. Switching Regulator