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RJH3044 Datasheet PDF – 360V, 30A, IGBT – Renesas

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Part Number: RJH3044

Function: Silicon N channel IGBT, 360V, 30A

Package: TO-220 Type

Manufacturer: Renesas, Hitachi

Image : RJH3044

Description

The RJH3044 is a silicon N channel IGBT. It has high speed power switching.

Parametrics

Absolute maximum ratings:

(1) collector to emitter voltage : 360V
(2) Gate to emitter voltage : ±30V
(3) collector current : 30A
(4) collector peak current : 200A
(5) collector to emitter diode forward peak current : 100A
(6) collector dissipation : 20W
(7) junction temperature : 150℃
(8)storage temperature : -55 to 150℃.

 

Features

(1) trench gate and thin wafer technology;
(2) high speed switching;
(3) low collector to emitter saturation voltage;
(4) low leak current;
(5) built-in fast recovery diode;
(6) isolated package.

RJH3044 Datasheet

RJH-3044 pdf

RJH3044 datasheet

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D1804 Datasheet PDF – 50V, 8A, NPN Transistor – Sanyo

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Part Number: D1804, 2SD1804

Function: 50V, 8A, NPN Transistor

Package: TO-251 Type

Manufacturer: Sanyo

Image

D1804 datasheet transistor

Description

This is NPN Epitaxial Planar Silicon Transistor.

Applications

Relay drivers, high-speed inverters, converters, and other general high-current switching applications.

Features

1. Low collector-to-emitter saturation voltage.
2. High current and high fT.
3. Excellent linearity of hFE.
4. Fast switching time.
5. Small and slim package making it easy to make 2SB1204/2SD1804-applied sets smaller.

 

Pinouts:
D1804 pinout

Absolute Maximum Ratings at Ta = 25°C

1. Collector-to-Base Voltage : VCBO = 60 V
2. Collector-to-Emitter Voltage : VCEO = 50 V
3. Emitter-to-Base Voltage : VEBO = 6 V
4. Collector Current : IC = 8 A
5. Collector Current (Pulse) : ICP = 12 A

 

D1804 Datasheet PDF Download


 

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