Part Number: CS4N60F
Function: 600V, 4A, N-Channel MOSFET
Package: TO-220F type
Manufacturer: Wuxi China Resources Silicon Microelectronics
Image:
Description
The CS4N60F is 600V, 4A, N-Channel Power MOSFET.
The silicon N-channel Enhanced VDMOSFET s, is obtained by the self-aligned planar T echnology which reduce the conduction loss, improve switching performance and enhance the avalanche ener gy . The transistor can be used in various power switching circuit for system miniaturization and hi gher ef ficiency . The package form is TO-220F , which accords with the RoHS standard.
Pinouts:
Features：
1. Fast Switching
2. ESD Improved Capability
3. Low Gate Charge (Typical Data: 14.5nC)
4. Low Reverse transfer capacitances(Typical: 8.5pF)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 4 A
4. Power Dissipation: Pd = 30 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Power switch circuit of adaptor and charger
Other data sheets are available within the file: CS4N60, CS4N60FA9HD
CS4N60F Datasheet PDF Download
