CS4N60F Datasheet PDF – 600V, 4A, N-ch, Power MOSFET

Part Number: CS4N60F

Function: 600V, 4A, N-Channel MOSFET

Package: TO-220F type

Manufacturer: Wuxi China Resources Silicon Microelectronics


CS4N60F Image


The CS4N60F is 600V, 4A, N-Channel Power MOSFET.

The silicon N-channel Enhanced VDMOSFET s, is obtained by the self-aligned planar T echnology which reduce the conduction loss, improve switching performance and enhance the avalanche ener gy . The transistor can be used in various power switching circuit for system miniaturization and hi gher ef ficiency . The package form is TO-220F , which accords with the RoHS standard.

CS4N60F Datasheet Pinout



1. Fast Switching

2. ESD Improved Capability

3. Low Gate Charge  (Typical Data: 14.5nC)

4. Low Reverse transfer capacitances(Typical: 8.5pF)



Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 4 A

4. Power Dissipation: Pd = 30 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C




1. Power switch circuit of adaptor and charger


Other data sheets are available within the file: CS4N60, CS4N60FA9HD

CS4N60F Datasheet PDF Download

CS4N60F pdf


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