Part Number: D5032, 3DD5032
Function: NPN Transistor / BV cbo = 1500V, Ic = 8A
Package: TO-3P Type
Manufacturer: Jilin Sino-microelectronics
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Description
The 3DD5032 is high breakdown voltage of NPN bipolar transistor. (Jilin Sino-microelectronics co., Ltd)
The main process of manufacture :
high voltage mesa type process, riple diffused process etc, adoption of fully plastic packge.
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 1500 V
2. Collector to Emitter Voltage: Vceo = 600 V
3. Emitter to Base Voltage: Vebo = 6 V
4. Collector Current: Ic = 8A
5. Total Dissipation : Pc = 50 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Applications
1. Horizontal deflection output for color TV.
Other data sheets are available within the file: 3DD5032, 3DD5032-O-A-N-D, 3DD5032-Y-O-A-B-D
D5032 Datasheet PDF Download
