Part Number: F2HNK60Z, STF2HNK60Z
Function: N-Channel 600V, 2A, Power MOSFET
Package: TO-220FP Type
Manufacturer: STMicroelectronics
Images:
Description
F2HNK60Z is 600V, 2A, MOSFET. An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.
N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.
The SuperMESH series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.
Features:
1. TYPICAL RDS(on) = 4.4Ω
2. EXTREMELY HIGH dv/dt CAPABILITY
3. ESD IMPROVED CAPABILITY
4. 100% AVALANCHE TESTED
5. NEW HIGH VOLTAGE BENCHMARK
6. GATE CHARGE MINIMIZED
Applications:
1. AC ADAPTORS AND BATTERY CHARGERS
2. SWITH MODE POWER SUPPLIES (SMPS)