Part Number: FQA11N90
Function: 900V, 11.4A, N-Channel MOSFET
Package: TO-3P Type
Manufacturer: Fairchild Semiconductor
Image and Pinouts:
Description
The FQA11N90 is 900V, 11.4A, N-Channel Power MOSFET.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
1. 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A
2. Low Gate Charge (Typ. 72 nC)
3. Low Crss (Typ. 30 pF)
4. 100% Avalanche Tested
5. RoHS compliant
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 900 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 11.4 A
4. Power Dissipation: Pd = 300 W (Tc = 25°C)
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Other data sheets are available within the file: FQA11N90_F109, FQA11N90_F109
FQA11N90 Datasheet PDF Download
