FQA11N90 Datasheet PDF – 900V, 11.4A, N-Ch, MOSFET

Part Number: FQA11N90

Function: 900V, 11.4A, N-Channel MOSFET

Package: TO-3P Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

FQA11N90 datasheet



The FQA11N90 is 900V, 11.4A, N-Channel Power MOSFET.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.


1. 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A

2. Low Gate Charge (Typ. 72 nC)

3. Low Crss (Typ. 30 pF)

4. 100% Avalanche Tested

5. RoHS compliant


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 900 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 11.4 A

4. Power Dissipation: Pd = 300 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: FQA11N90_F109, FQA11N90_F109


FQA11N90 Datasheet PDF Download

FQA11N90 pdf

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