This post explains for the MOSFET.
The Full Part Number is IRFS23N15D. The package is D2pak type.
The function of this semiconductor is 150V, HEXFET Power MOSFET.
The manufacturers of this product is International Rectifier.
See the preview image and the PDF file for more information.
Preview images :
FS23N15D is 150V, 23A, HEXFET Power MOSFET. HEXFET is a registered trademark for a type of power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) developed by International Rectifier, which is now part of Infineon Technologies. HEXFET MOSFETs are known for their high-performance characteristics and are widely used in various electronic applications, particularly in power electronics and amplifiers.
1. Low Gate-to-Drain Charge to Reduce Switching Losses
2. Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
3. Fully Characterized Avalanche Voltage and Current
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 150 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 23 A
4. Total Power Dissipation: Pd = 3.8 W
5. Channel temperature: Tch = 175 °C
6. Storage temperature: Tstg = -55 to +175 °C
1. High frequency DC-DC converters