Part Number: G4BC20F
Function: 600V, 9A, Fast Speed IGBT
Package: TO-220AB Type
Manufacturer: International Rectifier
Image and Pinouts:
Description
This is 600V, 9A, Fast IGBT ( insulated-gate bipolar transistor ).
Features
1. Fast : Optimized for medium operating frequencies
2. Generation 4 IGBT design provieds tighter parameter distribution and higher efficiency than Generation 3
3. Industry standard TO-220AB Package.
4. Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBTs
Benefits :
1. Generation 4 IGBTs offer highest efficiency available
2. IGBTs optimized for specified application conditions
3. Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 600 V
2. Gate to emitter voltage: Vges = ± 20 V
3. Collector current : Ic = 16 A
4. Collector dissipation : Pc = 60 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Other data sheets are available within the file: IRG4BC20FDPBF, IRG4BC20F
G4BC20F Datasheet PDF Download
