G4PH40UD PDF – 1200V, 21A, IGBT – IRG4PH40UD

Part Number: G4PH40UD, IRG4PH40UD

Function: 1200V, UltraFast CoPack IGBT

Package: TO-247AC Type

Manufacturer: International Rectifier

Images:G4PH40UD pinout igbt


G4PH40UD is 1200V, 21A, Insulated Gate Bipolar Transistor (IGBT) with an ultrafast soft recovery diode. This combination is used in various high-power applications such as motor drives, power supplies, and renewable energy systems.

The IGBT is a three-terminal power semiconductor device that combines the advantages of both bipolar junction transistors (BJTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs). It has a low on-state voltage drop and high current-carrying capability like a BJT, as well as the voltage control and high input impedance of a MOSFET. This makes IGBTs suitable for switching high currents with low power dissipation.

1. The fast recovery diode allows for faster turn-off of the IGBT, reducing switching losses and improving overall efficiency.

2. The soft recovery characteristic of the diode reduces voltage spikes and EMI, enhancing system reliability and reducing the need for additional filtering components.

3. The diode’s fast switching speed helps to ensure smooth current commutation between the IGBT and diode during the device’s conduction and turn-off transitions.

4. The combination of IGBT and the ultrafast soft recovery diode results in improved power handling capabilities, enabling higher switching frequencies and power densities in various applications.


• UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode

• New IGBT design provides tighter parameter distribution and higher efficiency than previous generations

• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package


G4PH40UD pdf datasheet igbt

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter Voltage: Vces = 1200 V

2. Gate to emitter Voltage: Vges = ± 20 V

3. Collector Current: Ic = 41 A

4. Maximum Power Dissipation: Pc = 65 W

5. Junction temperature: Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C



• Higher switching frequency capability than competitive IGBTs

• Highest efficiency available

• HEXFRED diodes optimized for performance with IGBT’s . Minimized recovery characteristics require
less/no snubbing


G4PH40UD PDF Datasheet