G5N150UF Datasheet PDF – 1500V, 10A, IGBT – Fairchild

Part Number: G5N150UF, SGS5N150UF

Function: 1500V, IGBT ( Insulated Gate Bipolar Transistor )

Package: TO-220F Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:
G5N150UF datasheet

Description

This is IGBT. Fairchild’s Insulated Gate Bipolar Transistor

(IGBT) provides low conduction and switching losses. The G5N150UF is designed for the Switching Power Supply applications.

Features

1. High Speed Switching

2. Low Saturation Voltage : Vce(sat)= 4.7 V @ IC = 5A

3. High Input Impedance

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 1500 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 10 A

4. Maximum Power Dissipation : Pc = 50 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Application:

1. Switching Power Supply

2. High Input Voltage Off-line Converter

Other data sheets are available within the file: SGS5N150UF, SGS5N150UFTU

G5N150UF Datasheet PDF

G5N150UF pdf

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