G5N150UF Datasheet PDF

Part Number: G5N150UF, SGS5N150UF

Function: 1500V, IGBT ( Insulated Gate Bipolar Transistor )

Package: TO-220F Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

Description

(IGBT) provides low conduction and switching losses. The G5N150UF is designed for the Switching Power Supply applications.

1. High Speed Switching

2. Low Saturation Voltage : Vce(sat)= 4.7 V @ IC = 5A

3. High Input Impedance

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 1500 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 10 A

4. Maximum Power Dissipation : Pc = 50 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Application:

1. Switching Power Supply

2. High Input Voltage Off-line Converter

Other data sheets are available within the file: SGS5N150UF, SGS5N150UFTU