GB6B60KD Datasheet PDF – 600V, 13A, IGBT, Transistor

Part Number: GB6B60KD

Function: 600V, 13A, IGBT, Transistor

Package: TO-220AB Type

Manufacturer: International Rectifier

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GB6B60KD datasheet

Description

This is 600V, 13A, N-Channel IGBT. The IGBT is insulated-gate bipolar transistor.

Benefits :

• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation

Features

• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 13 A

4. Maximum Power Dissipation: Pd = 90 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file:

IRGB6B60KDPBF, GS6B60KD, GSL6B60KD, IRGB6B60KD, IRGS6B60KD

GB6B60KD Datasheet PDF Download

GB6B60KD pdf

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