Part Number: GB6B60KD
Function: 600V, 13A, IGBT, Transistor
Package: TO-220AB Type
Manufacturer: International Rectifier
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Description
This is 600V, 13A, N-Channel IGBT. The IGBT is insulated-gate bipolar transistor.
Benefits :
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 600 V
2. Gate to emitter voltage: Vges = ± 20 V
3. Collector current : Ic = 13 A
4. Maximum Power Dissipation: Pd = 90 W (Tc = 25°C)
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Other data sheets are available within the file:
IRGB6B60KDPBF, GS6B60KD, GSL6B60KD, IRGB6B60KD, IRGS6B60KD
GB6B60KD Datasheet PDF Download
