IPP60R299CP Datasheet – 650V, 11A, MOSFET, Transistor

Part Number: IPP60R299CP, Marking : 6R299P

Function: 650V, 11A, CoolMOS Power Transistor

Package: TO-220AB Type

Manufacturer: Infineon Technologies

Image and Pinouts:

IPP60R299CP datasheet



The IPP60R299CP is 650V, 11A, MOSFET. CoolMOS is a type of power MOSFET (metal-oxide-semiconductor field-effect transistor) that is designed to be highly efficient and reliable. Power MOSFETs are commonly used in power electronics applications, such as power supplies, motor drives, and lighting systems, to switch and control large amounts of power.

CoolMOS power transistors are designed with a unique combination of advanced semiconductor materials and manufacturing processes that result in high efficiency and low switching losses. This makes them well-suited for high-frequency switching applications, where low power dissipation and high efficiency are critical.


1. Ultra low gate charge
2. Extreme dv/dt rated
3. High peak current capability

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source Voltage: VDSS = 600 V
2. Gate to source Voltage: VGSS = ± 20 V
3. Drain current: ID = 11 A (Tc = 25°C)
4. Power Dissipation: Ptot = 96 W (Tc = 25°C)
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: IPP60R299CPXKSA1


IPP60R299CP Datasheet PDF Download

IPP60R299CP pdf

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