IRLL014N Datasheet PDF – 55V, 2A, N-Ch, MOSFET

Part Number: IRLL014N

Function: 55V, 2A, N-Channel MOSFET

Package: SOT-223 Type

Manufacturer: International Rectifier

Image and Pinouts:

IRLL014N datasheet



This is 55V, 2.0A, Single N-Channel HEXFET Power MOSFET.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benfit, combined with the fast switching speed and ruggedized device design the HEXFET Power MOSFETs are well known for, provides the designer with an extemely efficient and reliable device for use in a wide variety of applicatins.



1. Surface Mount

2. Advanced Process Technology

3. Ultra Low On-Resistance

4. Dynamic dv/dt Rating

5. Fast Switching

6. Fully Avalanche Rated


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 55 V

2. Gate to source voltage: VGSS = ± 16 V

3. Drain current: ID = 2.0 A

4. Power Power Dissipation: Pd = 2.1 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C


Other data sheets are available within the file:



IRLL014N Datasheet PDF Download

IRLL014N pdf