Part Number: IRLL014N
Function: 55V, 2A, N-Channel MOSFET
Package: SOT-223 Type
Manufacturer: International Rectifier
Image and Pinouts:
This is 55V, 2.0A, Single N-Channel HEXFET Power MOSFET.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benfit, combined with the fast switching speed and ruggedized device design the HEXFET Power MOSFETs are well known for, provides the designer with an extemely efficient and reliable device for use in a wide variety of applicatins.
1. Surface Mount
2. Advanced Process Technology
3. Ultra Low On-Resistance
4. Dynamic dv/dt Rating
5. Fast Switching
6. Fully Avalanche Rated
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 55 V
2. Gate to source voltage: VGSS = ± 16 V
3. Drain current: ID = 2.0 A
4. Power Power Dissipation: Pd = 2.1 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Other data sheets are available within the file:
IRLL014NTRPBF, IRLL014NPBF, LL014N, LLO14N