IRF3205 Datasheet – 55V, 110A, HEXFET Power MOSFET

What is IRF3205?

This is one of the types of MOSFETs and is a kind of transistor. IRF3205 is a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) used in electronic circuits for switching and amplification applications. It has a low on-resistance and can handle high current and voltage levels, making it suitable for use in power supplies, motor control circuits, and other high-power applications

Function: Power MOSFET ( Vdss=55V/ Rds(on)=8.0mohm/ Id=110A )

Package: TO-220AB Type

Manufacturer: International Rectifier

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IRF3205 image

Description

This is N-channel MOSFET with a voltage rating of 55V and a current rating of 110A.

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

IRF3205 pinout

IRF3205 datasheet

Features

1. Advanced Process Technology
2. Ultra Low On-Resistance
3. Dynamic dv/dt Rating
4. 175°C Operating Temperature
5. Fast Switching
6. Fully Avalanche Rated

Advantages

1. The low on-state resistance allows for efficient power management and reduces power loss.
2. The high current and voltage rating make it suitable for high-power applications.

3. It has a fast switching speed, making it ideal for use in high-frequency applications.

Disadvantages

1. It is relatively large compared to other MOSFETs, making it less suitable for use in space-constrained applications.

2. It may not be suitable for low-power applications due to its high current and voltage ratings.

IRF3205 Datasheet

IRF3205 pdf