Part Number: IRF3710
Function: HEXFET Power MOSFET ( Vdss=100V, Id=57A )
Package: TO-220AB Pin Type
Manufacturer: International Rectifier
Description
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF3710 Pinout
Features
1. Advanced Process Technology
2. Ultra Low On-Resistance
3. Dynamic dv/dt Rating
4. 175°C Operating Temperature
5. Fast Switching
6. Fully Avalanche Rated
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 100 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 57 A
4. Total Power Dissipation: Pd = 200 W
5. Channel temperature: Tch = 175 °C
6. Storage temperature: Tstg = -55 to +175 °C
IRF3710 Datasheet
