This is a power MOSFET used in electronic circuits for switching and amplification applications. It is an N-channel MOSFET with a voltage rating of 100V and a current rating of 9.7A. The IRF520N has a low on-resistance of 0.20 Ohm, which allows it to handle high power and reduce powe
Function: HEXFET Power MOSFET ( VDSS = 100V, ID = 9.7A )
Package: TO-220AB Type
Manufacturer: International Rectifier, a semiconductor company that specialized in power management technology, was acquired by Infineon Technologies AG in 2015.
Image and Pinouts:
Description
This is HEXFET Power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Features
1. Advanced Process Technology
2. Dynamic dv/dt Rating
3. 175°C Operating Temperature
4. Fast Switching
5. Fully Avalanche Rated
6. Lead-Free
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 100 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 9.7 A
4. Drain Power Dissipation: Pd = 48 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +175 °C
Other data sheets are available within the file:
IRF520, IRF520NPBF
IRF520N Datasheet PDF Download
