This post explains for the MOSFET.
Part Number: IRF740
Function: 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET
Package: TO-220AB Type
Manufacturer: Fairchild Semiconductor Corporation, a semiconductor manufacturing company, was acquired by ON Semiconductor Corporation on September 18, 2016.
See the preview image and the PDF file for more information.
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
• 10A, 400V
• rDS(ON) = 0.550Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
1. The IRF740 has a low on-resistance, which means it can handle high power and reduce power loss.
2. Its TO-220 package provides good thermal dissipation and makes it easy to mount on a heatsink.
3. It has a high voltage rating compared to the IRF640, making it suitable for high-voltage applications.
4. It is suitable for use in a wide range of electronic circuits, making it a versatile component in electronics design.
Other data sheets are available within the file: IRF740B