Part Number: IRF840
Function : 500V N-Channel MOSFET
Package: TO-220AB Type
Manufacturer: Fairchild Semiconductor
Description
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17425.
Pinout
Features
1. 8A, 500V
2. rDS(ON) = 0.850 Ω
3. Single Pulse Avalanche Energy Rated
4.SOA is Power Dissipation Limited
5. Nanosecond Switching Speeds
6. Linear Transfer Characteristics
7. High Input Impedance
IRF840 Datasheet
