Part Number: IRFR4104PBF
Function: 40V, 42A, HEXFET Power MOSFET
Package: D-Pak, I-Pak Type
Manufacturer: International Rectifier
Image and Pinouts:
Description
The IRFR4104PB is 40V, 42A, HEXFET Power MOSFET.
This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
1. Advanced Process Technology
2. Ultra Low On-Resistance
3. 175°C Operating Temperature
4. Fast Switching
5. Repetitive Avalanche Allowed up to Tjmax
6. Lead-Free
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 40 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 119 A (Tc = 25°C)
4. Power Dissipation: Pd = 140 W (Tc = 25°C)
5. Channel temperature: Tch = 175 °C
6. Storage temperature: Tstg = -55 to +175 °C
Other data sheets are available within the file:
FR4104, FR4104PBF, FU4104, FU4104PBF