This is one of the types of MOSFETs and is a kind of transistor.
Part Number: K3067
Function: 600V, N-Channel MOSFET (Transistor)
Package: TO-220 Type
Manufacturer: Toshiba
Images:
K3067 Description
The K3067 is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba. It is commonly used as a switch in power electronics applications, where its low on-resistance and fast switching speed make it well-suited for high-efficiency power conversion systems.
The 2SK3067 has a maximum drain-source voltage of 600V and a maximum drain current of 2A,
making it suitable for high voltage, high current applications.
N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.
Features
1. Low drain−source ON resistance : RDS (ON) = 4.2 Ω (typ.)
2. High forward transfer admittance : |Yfs| = 1.7 S (typ.)
3. Low leakage current : IDSS = 100 μA (max) (VDS = 600 V)
4. Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 2 A
4. Drain power dissipation : PD = 25 W
5. Single pulse avalanche energy : Eas = 93 mJ
6. Repetitive avalanche energy : Ear = 2.5 mJ
7. Channel temperature: Tch = 150 °C
8. Storage temperature: Tstg = -55 to +150 °C
Applications
1. Chopper Regulator
2. DC−DC Converter and Motor Drive
Other data sheets are available within the file: 2SK3067
K3067 Datasheet PDF Download
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