K3067 Datasheet – 600V, 2A, N-Ch, MOSFET (Transistor)

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K3067

Function: 600V, N-Channel MOSFET (Transistor)

Package: TO-220 Type

Manufacturer: Toshiba


K3067 datasheet

K3067 Description

The K3067 is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba. It is commonly used as a switch in power electronics applications, where its low on-resistance and fast switching speed make it well-suited for high-efficiency power conversion systems.

The 2SK3067 has a maximum drain-source voltage of 600V and a maximum drain current of 2A,
making it suitable for high voltage, high current applications.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.


1. Low drain−source ON resistance : RDS (ON) = 4.2 Ω (typ.)
2. High forward transfer admittance : |Yfs| = 1.7 S (typ.)
3. Low leakage current : IDSS = 100 μA (max) (VDS = 600 V)
4. Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


K3067 pinout transistor

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 2 A
4. Drain power dissipation : PD = 25 W
5. Single pulse avalanche energy : Eas = 93 mJ
6. Repetitive avalanche energy : Ear = 2.5 mJ
7. Channel temperature: Tch = 150 °C
8. Storage temperature: Tstg = -55 to +150 °C


1. Chopper Regulator
2. DC−DC Converter and Motor Drive

Other data sheets are available within the file: 2SK3067

K3067 Datasheet PDF Download

K3067 pdf

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