Part Number: IXBA14N300HV
Function : IGBT NPT 3000V, 38A, 200W
Package: TO-263HV Type
Manufacturer: IXYS
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Description
This is 3000V, 38A, IGBT (Insulated-Gate Bipolar Transistor).
POWER DEVICES > DISCRETE IGBTs > Reverse Conducting IGBTs (BiMOSFETs) > VHV
Specifications:
1. VCES, (V) : 3000 V
2. IC25, TC=25°C, (A) : 38 A
3. IC110, TC=110°C, (A) : 14 A
4. CE(sat), max, TJ=25°C, (V) : 2.70
5. tf typ, TJ=25°C, (ns) : 1900
6. Gate drive, (V) : 15 V
7. RthJC, max, (ºC/W) 0.62
Pinout:
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 3000 V
2. Gate to emitter voltage: Vges = ± 20 V
3. Collector current : Ic = 38 A
4. Collector dissipation : Pc = 200 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
Other data sheets are available within the file: IXBT14N300HV, IXBH14N300HV
Official Homepage: https://ixapps.ixys.com/
IXBA14N300HV Datasheet PDF
