Part Number: IXFH26N60, IXFT26N60
Function: 600V, 26A, HiPerFET Power MOSFET
Package: TO-247AD
Manufacturer: IXYS
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Description
This is 600V, 26A, HiPerFET Power MOSFET and N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr.
Features
1. International standard packages
2. EpoxymeetUL94V-0, flammability classification
3. Low RDS (on) HDMOSTM process
4. Rugged polysilicon gate cell structure
5. Avalanche energy and current rated
6. Fast intrinsic Rectifier
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 26 A
4. Drain Power Dissipation: Pd = 360 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Advantages :
1. Easy to mount
2. Space savings
3. High power density
IXFH26N60 Datasheet
