Part Number: J449, 2SJ449
Function: 250V, P-channel Power MOSFET
Package: TO-220 Type
Manufacturer: NEC
Images:
Description
The J449 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications.
A P-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of MOSFET that is constructed using a p-type substrate. MOSFETs are electronic devices that are widely used as switches or amplifiers in electronic circuits.
In a P-Channel MOSFET, a thin layer of oxide is grown on the surface of the p-type substrate, and a metal gate is deposited on top of the oxide.
The gate is separated from the substrate by the oxide layer and is electrically insulated from the substrate.
The gate is used to control the flow of current between the source and the drain terminals of the MOSFET.
Features
• Low On-Resistance :
RDS(on) = 0.8 Ω MAX. (@ VGS = –10 V, ID = –3.0 A)
• Low Ciss Ciss = 1040 pF TYP.
• High Avalanche Capability Ratings
• Isolated TO-220 Package
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = – 250 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 6 A
4. Total Power Dissipation: Pd =2 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C