Part Number: K07N120
Function: 1200V, 8A, Fast IGBT in NPT-technology
Package: TO-247 Type
Manufacturer: Infineon Technologies
Image and Pinouts:
Description
This is 1200V, 8A, IGBT. Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode.
Features
1. Lower Eoff compared to previous generation
2. Short circuit withstand time – 10us
3. Designed for :
(1) Motor controls
(2) Inverter
(3) SMPS
4 NPT-Technology offers:
(1) very tight parameter distribution
(2) high ruggedness, temperature stable behaviour
(3) parallel switching capability
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 1200 V
2. Gate to emitter voltage: Vges = ± 20 V
3. Collector current : Ic = 8 A
4. Power dissipation : Ptot = 125 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Other data sheets are available within the file: SKW07N120
K07N120 Datasheet PDF Download
