Part Number: K1167
Function: Silicon N-Channel MOSFET
Package: TO-3P Type
Manufacturer: Hitachi ( Renesas Electronics )
Pinouts:
Description
1. Low on-resistance
2. High speed switching
3. Low drive current
4. No secondary breakdown
5. Suitable for switching regulator and DC-DC converter
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 450 V
2. Gate to source voltage : VGSS = ±30 V
3. Drain current : ID = 15 A
4. Drain peak current : ID(pulse) = 60 A
5. Body to drain diode reverse drain current : IDR = 15 A
6. Channel dissipation : Pch = 100 W
Application
1. High speed power switching
Other data sheets are available within the file: 2SK1167, 2SK1168, K1168
K1167 Datasheet PDF Download
