K11A60D PDF Datasheet – 600V, 11A, MOSFET – TK11A60D

This post explains for the MOSFET.

The Part Number is K11A60D, TK11A60D.

The function of this semiconductor is 600V, 11A, MOSFET.

The package is TO-220 Type

Manufacturer: Toshiba Semiconductor

Preview images :

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K11A60D image

Description

This is 600V, 11A, Silicon N Channel MOSFET.

Features

• Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.)

• High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)

• Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)

• Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 11 A

4. Drain Power Dissipation: Pd = 45 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Switching Regulator

K11A60D Datasheet