This post explains for the MOSFET.
The Part Number is K11A60D, TK11A60D.
The function of this semiconductor is 600V, 11A, MOSFET.
The package is TO-220 Type
Manufacturer: Toshiba Semiconductor
Preview images :
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Description
This is 600V, 11A, Silicon N Channel MOSFET.
Features
• Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
• Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
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Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 11 A
4. Drain Power Dissipation: Pd = 45 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Switching Regulator