Part Number: K12A50D, K12A500, 102020
Function: 500V, 12A, N-Channel MOSFET
Package: TO-220 Type
Manufacturer: Toshiba Semiconductor
Images:
Description
The K12A500 is 500V, 12A, N-Channel MOSFET.
Features
1. Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.)
2. High forward transfer admittance: |Yfs| = 6.0 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 500 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 12 A
4. Drain peak current : ID(pulse) = 48 A
5. Drain power dissipation : Pd = 45 W
6. Single pulse avalanche energy : Eas = 365 mJ
7. Channel temperature: Tch = 150°C
8. Storage temperature: Tstg = -55 to +150 °C
Pinout
Applications :
1. Switching Regulator
K12A500 Datasheet PDF
