K13A60D Datasheet – 600V, 13A, N-Ch, MOSFET – TK13A60D

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K13A60D, TK13A60D

Function: 600V, 13A, Silicon N Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba

Image:

Description

This is 600V, 13A, Silicon N Channel MOS Type Field Effect Transistor.

Features

1. Low drain-source ON-resistance: RDS (ON)= 0.33 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 6.5 S (typ.)

3. Low leakage current: IDSS= 10 μA (max) (VDS= 600 V)

4.  Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Pinouts:

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 13 A

4. Drain Power Dissipation: Pd = 50 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switching Regulator

Electrical Characteristics

Other data sheets are available within the file:  TK13A60D

K13A60D Datasheet

Related articles across the web

• Blog Post: DC/DC converter datasheets – System losses demystified