This is one of the types of MOSFETs and is a kind of transistor.
Part Number: K13A60D, TK13A60D
Function: 600V, 13A, Silicon N Channel MOSFET
Package: TO-220 Type
Manufacturer: Toshiba
Image:
Description
This is 600V, 13A, Silicon N Channel MOS Type Field Effect Transistor.
Features
1. Low drain-source ON-resistance: RDS (ON)= 0.33 Ω(typ.)
2. High forward transfer admittance: |Yfs| = 6.5 S (typ.)
3. Low leakage current: IDSS= 10 μA (max) (VDS= 600 V)
4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Pinouts:
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 13 A
4. Drain Power Dissipation: Pd = 50 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Switching Regulator
Electrical Characteristics
Other data sheets are available within the file: TK13A60D
K13A60D Datasheet
