Part Number: K1808
Function: Silicon N-Channel MOSFET
Package: TO-220FM Type
Manufacturer: Renesas Electronics
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Description
This is 900V, 4A, Silicon N-Channel MOSFET.
Features
1. Low on-resistance
2. High speed switching
3. Low drive current
4. No secondary breakdown
5. Suitable for switchingregulator, DC-DC converter
Pinouts:
Absolute Maximum Ratings (Ta = 25°C)
Drain to source voltage: VDSS = 900 V
Gate to source voltage: VGSS = ± 30 V
Drain current: ID = 4 A
Drain peak current : ID(pulse) = 10 A
Body to drain diode reverse drain current : IDR = 4 A
Channel dissipation: Pch = 35 W
Channel temperature: Tch = 150 °C
Storage temperature: Tstg = +150 °C
Application
High Speed Power Switching.
Other data sheets are available within the file: 2SK1808
K1808 Datasheet PDF Download
