Part Number: K18A50D, TK18A50D
Function: 500V, 18A, MOSFET ( Field Effect Transistor )
Package: TO-220SIS Type
Manufacturer: Toshiba
Images:
Description
K18A50D is 500V, 18A, Silicon N Channel MOS Type Field Effect Transistor.
Features:
1. Low drain-source ON resistance: RDS (ON) = 0.22 Ω (typ.)
2. High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
4. Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 500 V
2. Gate to source voltage: VGSS = ± 30 v
3. Drain current: ID = 18 A
4. Allowable Power Dissipation: Pd = 50 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
K18A50D PDF Datasheet
