This post explains for the MOSFET.
The Part Number is K2608, 2SK2608.
The function of this semiconductor is 900V, 3A, N-Channel MOSFET.
Manufacturer: Toshiba Semiconductor, Package: TO-220AB type
Preview images :
Description
The K2608 is 900V, 3A, Silicon N Channel MOS Type Field Effect Transistor.
Features
1. Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.)
2. High forward transfer admittance : |Yfs|= 2.6 S (typ.)
3. Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)
4. Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 900 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 3 A
4. Drain Power Dissipation: Pd = 100 W (Ta = 25°C)
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Switching Regulator
K2608 PDF Datasheet
